jiang su changjiang electronics technolog y co.,ltd to - 92 plastic - encapsulate transistors mps2907 a transistor ? p np ? features power dissipation p cm : 0. 6 25 w ? t amb=25 ??? collector current i cm : - 0.6 a c ollector - base voltage v ( br ) cbo : - 60 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = - 10 | a ? i e =0 - 60 v c ollector - emitter breakdown voltage v(br) ceo i c = - 1 0 ma , i b =0 - 60 v emitter - base breakdown voltage v(br) e b o i e = - 10 | a ? i c =0 - 5 v collector cut - off current i cbo v cb = - 50 v , i e =0 - 0.0 1 | a collector cut - off current i c e o v ce = - 35 v , i b =0 - 0.0 5 | a emitter cut - off current i eb o v e b = - 3 v , i c =0 - 0. 0 1 | a dc current gain h fe v ce = - 1 0 v , i c = - 1 5 0 m a 10 0 300 collector - emitter saturation voltage v ce(sat) i c = - 5 00 ma , i b = - 5 0 m a - 0.6 v b ase - emitter saturation voltage v be(sat) i c = - 5 00 ma , i b = - 5 0 m a - 1 . 2 v transition frequency f t v ce = - 20 v, i c = - 50ma f = 100mhz 200 mhz classification of h fe (1) rank l h range 100 - 200 200 - 300 1 2 3 to ?a 92 1.emitter 2. base 3 . collector
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
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